Customers are using EUV for 7nm logic and ‘mid-10nm’ DRAM, says ASML.
The company started shipping its first NXE:3400B system in Q1 and completed the shipment early in Q2.
ASML says it is committed to delivering better than 125 wph with better than 90% up-time.
Three NXE:3400B shipments are expected in Q2. They use 13.5 nm EUV light, generated by a tin-based plasma source.
The systems feature all-reflective 4x reduction lens assemblies from Carl Zeiss SMT with a maximum exposure field of 26 mm by 33 mm.
The NXE:3400B is equipped with projection optics with NA 0.33 and a new illuminator with operating range sigma 0.06 – 1 to maintain high productivity while enabling low-k1 and a resolution of 13 nm.
In-situ measurement and corrections per wafer of the optics and stages enable maximum imaging performance of overlay and CDU for each wafer exposed when imaging at low-k1.
The value of the 21 EUV system backlog at the compnay is now €2.3 billion.
The installed base of EUV systems is now up to 14 machines.
See also: ASML buys Hermes Microvision for $3bn
See also: ASML gets order for 15 EUV machines
