The devices combine Tunneling Magnetoresistance (TMR) and CMOS technologies in a compact LGA4 package.
Stacked from 16 images. Method=C (S=4)
Designed for operation across the voltage range 1.8 V–5.5 V, the LF21173TMR and LF21177TMR support multiple magnetic thresholds, enabling flexible integration into space-constrained applications such as smart meters, electronic locks, medical devices, and portable consumer electronics.
Compared with conventional Hall-effect switches, these TMR devices deliver significantly higher sensitivity and lower power draw, helping engineers build smaller, more energy-efficient, and longer-lasting products.
Unlike traditional Hall-effect technology that relies on the Hall voltage generated by magnetic flux, TMR sensors measure resistance changes in magnetic tunnel junctions, producing stronger signal output at much lower current levels.
The result is a switch that consumes less power while maintaining excellent accuracy and thermal stability—ideal for energy-constrained applications where every microamp counts.
At-a-Glance: Key Features and Benefits
- Ultra-low power consumption extends battery life in portable devices.
- High magnetic sensitivity (9 – 30 Gauss) ensures reliable detection with smaller magnets.
- Wide 1.8 V–5.5 V operating range supports flexible system integration.
- Fast response time enables precise, real-time sensing.
- Compact LGA4 package fits space-constrained designs.
- Omnipolar operation detects both the north and south poles, simplifying the layout.
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