Silicon Carbide

Allegro MicroSystems has created a pair of ICs that transmit isolated control signals and power to silicon carbide mosfet gates. AHV85003 is the transmitter and AHV85043 is the receiver, which need to be connected together through an isolation transformer. “With selectable gate-to-source voltages of 15V, 18V and 20V, and adjustable regulated negative voltage, designers can swap between SiC FETs from ...

Melexis is creating all-silicon RC snubbers for integrating within silicon carbide power modules. Currently sampling to potential customers, the parts will all be variants of the new part number ‘MLX91299’, and be delivered as a bare die ready for top-side wire-bonding alongside mosfet and diode die inside the power module. The back metallisation is compatible with both sintering and soldering. ...

SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, including a reverse-parallel Schottky diode. The modules “are tested beyond 1,400V and target battery chargers, photovoltaic inverters, server power supplies and energy storage ...

ipTest has announced a pair of wide bandgap power device testers for measuring GaN and SiC transistors, aimed at academic researchers as well as engineers developing power products. Quasar200 is for dc and ac evaluations of silicon, galium nitride and silicon carbide devices. Pulsar600 is a higher current version – for shorts up to 10kAac – particularly suited to testing ...

Navitas has revealed its proposals towards Nvidia’s ‘AI factory’ data centre concept in which power is distributed at 800Vdc, revealing both grid-voltage and 800V power converters. With power consumption estimated at 1MW per rack, the front-end of the data centre will need to receive three-phase grid power at ~14kV or ~35kV. Eschewing a multi-tonne grid-frequency transformer to produce three-phase 480Vac ...

Littelfuse has launched a single-channel isolated gate driver typically capable of delivering ±7A and  ±4A at minimum. IX3407B, as it will be known, uses a 2.5kV capacitive isolation barrier (3kV for 1s) and can withstand 150kV/μs transients. The inputs’ thresholds are compatible with 3.3V logic and there are separate pull-up and pull-down outputs so that resistors can be used to ...

Toshiba has launched three industrial 650V SiC mosfets in TOLL packaging, with on-resistance as low 27mΩ. “The TOLL package is a 9pin, four-terminal package designed to facilitate the use of a Kelvin connection for its signal source terminal for the gate drive,” said the company. “The surface mounting capability of the TOLL package allows for smaller parasitic impedance, which leads ...

Navitas Semiconductor will have a new president and CEO on the first of September, as Chris Allexandre takes over from company founder Gene Sheridan. “On behalf of the Board of Directors, I’d like to thank Gene Sheridan for his vision in creating and leading Navitas over the last decade,” said Navitas’ chairman Richard Hendrix. “We deeply appreciate Gene’s leadership and ...

Microchip Technology and power supply maker Delta Electronics are to collaborate on silicon carbide (SiC) based power supply design. “SiC is increasingly important in power solutions because of its wide-bandgap properties, which enable smaller and more efficient designs for high-voltage, high-power applications,” said Microchip’s v-p of high-power components Clayton Pillion. So what exactly is going on? “The partnership enables both ...

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A2/s at 25°C, and 100A, 50A2/s at 150°C. A square pulse of 710A can be withstood for 10μs at 25°C. There is a choice of packaging for the same die: PSC20120L has a ...