With sufficient heatsinking, the device, TK057V60Z, can carry 40A continuously and pulses up to 160A.
47mΩ is the typical on-resistance while passing 15A with a 10V gate drive – maximum resistance under these conditions is 57mΩ.
For more effective gate driving, the package includes a Kelvin source terminal. “The typical gate-drain charge can be as low as 15nC,” said the company, although the total gate charge at 400V 15A with 10V on the gate is 65nC, according to the data sheet.
For design, there is a G0 SPICE model with which to verifiy circuit function, and a G2 SPICE models for accurate transient modelling.
This is one of Toshiba’s DTMOSVI series 600V transistors, which is calimed to achieve ~36% reduction in Rsd(on).Qg and ~52% reduction in Rsd(on).Qdg compared to its earlier 600V DTMOSIV-H series designs.
Applications are foreseen in data centre servers, uninterruptible power supplies and photovoltaic power conditioners.
