Toshiba has picked its 4.9 x 6.1 x 1mm ‘SOP Advance(E)’ package for a pair of industrial n-channel mosfets: TPM1R908QM 80V 238A 1.68mΩ max TPM7R10CQ5 150V 120A 7.1mΩ max Maximum junction to case thermal resistance is 0.6°C/W (25°C) in each case. “The SOP Advance(E) package marks a substantial improvement over Toshiba’s existing ‘SOP Advance(N)’ package, reducing package resistance by approximately ...
Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A2/s at 25°C, and 100A, 50A2/s at 150°C. A square pulse of 710A can be withstood for 10μs at 25°C. There is a choice of packaging for the same die: PSC20120L has a ...
Vishay Intertechnology has announced the third generation of its 650 and 1,200V SiC (silicon carbide) Schottky diodes, in a 2.6 x 5.2mm surface-mount package. The DO-221AC package, branded ‘SlimSMA HV’, has a 3.2mm minimum creepage distance. “The diodes offer a 0.95mm profile compared to 2.3 mm for competing SMA and SMB packages,” said Vishay. “Their package features a moulding compound ...
Rohm has introduced a tiny 20A 30V common-source dual mosfet for switching power rails on and off. On-resistance in AW2K21 is typically 2mΩ and comes in a 2 x 2mm WLCSP. It “adopts a proprietary structure that enhances cell density while minimising the on-resistance per unit chip area – even compared to similarly sized GaN hemts, on-resistance is decreased by ...
Nexperia has created ESD protection diodes for 48V vehicle communications networks. “Until now, automotive equipment manufacturers lacked suitable ESD protection solutions specifically designed for 48V data lines,” claimed Nexperia head of protection devices Alexander Benedix. “As a result, they often had to rely on workarounds – either including an additional 12 V power rail or connecting several lower-voltage protection diodes ...
Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 x 8mm DFN8080 package. “In hot-swap circuits used to safely replace modules while servers remain powered on, mosfets are required that offer both wide safe operating area and low on-resistance to protect against ...
STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package. “STGWA30IH160DF2 IGBT combines high thermal performance with efficiency in soft-switching topologies and easy paralleling,” claimed the company. Nominal current rating is 30A (120A pulsed), and the device works with its junction up to 175°C. Thermal resistance is 0.36°C/W junction-to-case, and 0.81°C/W for ...
Infineon Technologies has announced a rad-hardened GaN transistor designed to operate in harsh space environments. It “is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency to the JANS specification MIL-PRF-19500/794”, according to the company. “The gallium nitride hemts [high electron mobility transistors] are engineered for mission-critical ...
Toshiba has introduced a set of industrial-grade 650V SiC mosfets in 8 x 8mm DFN packaging. Of the four new devices, the company picks TW054V65C as its poster child for low turn-on and turn-off losses: 122 ad 58μJ respectively when a pair are used in a 400V 20A half-bridge* – said to be ~55% and 25% less than the company’s ...
Rhopoint Components is stocking precision current sensing resistors from VPG Foil Resistors. The 1W surface-mount RBF series measures 6.3 x 3.2mm and offers resistances between 0.01Ω and 1Ω. Tolerances down to 0.5% are available between 0.1 and 1Ω, or down to 1% from 10mΩ to 100mΩ. All the series are available with a temperature coefficient of ±25ppm/°C between -25 and ...
