EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beach-head across low-voltage applications that have long been dominated by silicon,” said EPC CEO Alex Lidow. Packaged in 3.3 x 2.6mm ...
Infineon has launched its CoolSiC MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries ...
Bourns has won a IEC 61051-2 certificate of compliance for its UL 1449 listed IsoMOV surge protection devices. These are hybrid protectors, that combine a MOV (metal oxide varistor) with a gas discharge tube (GDT) in a through-hole disc-style package. The GDT blocks leakage currents through the MOV that may lead to premature failure, explained the company. “The comprehensive documentation ...
WeEn Semiconductors has unveiled a pair of 2,000V rectifiers in TO247 packaging, one rated at 90A and the other at 60A. They are the WND90P20W and the WND60P20W respectively. “These devices are engineered to mitigate voltage spikes in electric vehicle charging loads,” according to the company, which went on to emphasise their forward voltage drop and thermal resistance. Digging into ...
Microchip has achieved JANSF qualification for a 100V n-channel mosfet to to 300krad (Si) TID (total ionising dose), and completed its family of radiation-hardened power mosfets to MIL-PRF-19500/746 slash-sheet specification. “The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications,” according to ...
SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W GCMX080A120B2T1P Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is tested to over 1,350V with 100% wafer-level ...
Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 package. The company claims a leading Qc x Vf figure-of-merit, but does not include the numbers in its data sheets, so Electronics Weekly unleashed its calculator to find typical 25°C ...
For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies may incur higher power losses due to the larger effective body diode voltage of GaN devices,” according to the company, which explained: “GaN transistor reverse conduction voltage is dependent on the threshold ...
Rohm has created three n-channel power mosfets in 5 x 6mm DFN packaging. RS7E200BG is a 30V mosfet optimised for both secondary-side ac-dc conversion and hot-swap controllers in 12V enterprise server power supplies. RS7N200BH is an 80V mosfet optimised for secondary ac-dc conversion in 48V server power supplies, as is RS7N160BH. “The DFN5060-8S package increases the internal die size area ...
