A worldwide distribution agreement means that Ohmite‘s power resistor range will be available through Arrow Electronics. Ohmite manufactures industrial and surface mount power resistors, load banks, heat sinks and rheostats in the US and Mexico. Its range includes high power, high voltage, current sense and surge resistors for use in transport, industrial, energy and aerospace sectors. In addition to standard ...
Bluetooth LE modules that combine Wi-Fi 6 (802.11ax) and Bluetooth Core 5.4 by Ezurio (formerly known as Laird Connectivity) are available from Mouser Electronics. The Sona NX611 Wi-Fi 6 + Bluetooth LE modules are based on NXP’s IW611 Wi-Fi 6 chipset and boast a data transmission throughput of 500Mbps. The small industrial IoT modules are suitable for use in IoT, ...
Power mosfet and wafer-maker IceMos Technology has pulled-in $22m of series-E funding, including $7.5m from 57 Stars, and money from un-named “earlier stage USA investors” and a “London-based investor”, said IceMos Headquartered in Arizona, IceMos has manufacturing in Northern Ireland, research in Arizona and a design center in Tokyo. Its wafer products include active layers attached to handle wafers using ...
Vishay is claiming industry’s lowest Rds(on).Qg and Rds(on).Co(er) figures-of-merit for its latest 650V super-junction mosfet. The typical figures are 3.74ΩnC and 8ΩpF respectively. SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical on-resistance is 48mΩ (25°C, 10Vgs) and gate charge can be 78nC (16A, 520V, 10Vgs). “The device addresses 200 ...
Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint. The leaded package is 3.5mm thick is a SOT8107-2, according to the company, which has branded it ‘X.PAK’. The keads have a 1.27mm pitch. “This package, with its compact form factor, combines the assembly benefits of SMD with the cooling efficiency ...
Infineon is shipping the CoolSiC Schottky diode 2000 V G5 product family – its first discrete SiC diode with a breakdown voltage of 2000V – in a TO-247-2 package. The product family fits applications with DC link voltages up to 1500 V DC, making it suitable for solar and EV chargers. An evaluation board for the 2000 V CoolSiC product ...
Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12. They “support overvoltage protection, load switching and battery management systems in mobile devices and laptop computers”, according to ...
Magnachip has added 25 Gen6 SJ MOSFETs with switching speeds improved by approximately 23%, reducing the RSP of applications by about 40% compared to the previous generation, thereby enhancing the Figure of Merit by 40%. Additionally, a Zener diode is embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. The chip sizes ...
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five years”, it said. It is a 60V p-channel mosfet, and joins four n-channel space devices for 60V or 150V use in either TO247 or D2PAK plastic packaging. The p-channel, called BUP06CP038F-01, comes in DPAK (TO252) form ...
Rohm has formerly announced the TOLL-packaged 650V GaN hemts that Electronics Weekly featured in a GaN driving trechnology article last week. To get the devices, called GNP2070TD-Z, into the increasingly popular ~12 x 10 x 2.4mm TOLL (TO-lead-less) package, which is finding use in high power industrial and automotive equipment, Rohm chose to out-source the back-end to ATX Semiconductor (Weihai) ...
