GaN Systems is claiming up to 96% power efficiency from a 200 + 200W (8Ω) Class-D stereo amplifier built around its gallium nitride power transistors. THD+N is under 0.03%, with further optimisation possible, according to the company. 300W/channel is available into 4Ω. Called the Gen2 Amplifier, the evaluation kit comes with a matching 400W (550W peak) LLC mains power supply design, that ...
Toshiba has launched three quad Form-A voltage driven photorelays, claiming one of them with one of the smallest mounting areas in the industry. They are Toshiba’s first four-circuit, 4-Form-A, relays, in a 12.5mm2 (2 x 6.25 x 1.3mm) package dubbed S-VSON16T. “The area is approximately 14% less compared with the mounting area of four one-channel relays,” according to the company. ...
Miniature micro-layer (MML) film capacitors offer energy density of 400j/dm3 for weight and size reductions compared to polypropylene or polyester dielectrics. The capacitors developed by Exxelia are available from New Yorker Electronics. They also have an increased operating temperature up to 140°C and transient voltage protection. Capacitance ranges from 1μF – 1000μF and voltages from 50V – 1,000V. Operating temperature ...
STMicroelectronics had debuted its third generation of silicon carbide mosfet with a 650V device aimed at electric-vehicle power-trains. Called SCT040H65G3AG, the part typically has a 40mΩ on-resistance and can carry 30A through its Kelvin source H2PAK-7 package (right). Regarding gen 3 “ST’s new SiC devices are specifically optimised for automotive applications including traction inverters, on-board chargers and dc-dc converters, as well as e-climate ...
Onsemi is aiming at 80 Plus Titanium efficiency in server PSUs as well as telecoms with a 600V power mosfet family called 600V Superfet V. “80 Plus Titanium certification requires server and data storage hardware to deliver 90% power efficiency levels in 10% load conditions, and 96% efficiencies when dealing with 50% loads,” said company general manger Asif Jakwani. The 10% load condition ...
Alpha and Omega Semiconductor has announced a series of super-junction power mosfets. Branded αMOS5, its first members are both 600V 250A transistors in TO-247 packaging: the 40mΩ AOK040A60, and the 42mΩ AOK042A60FD ‘fast body diode’ device – reverse recovery is typically 252ns (25A, 100A/μs, 400V) compared with 525ns in the 40mΩ part. “The optimised capacitance of the 40mΩ product will provide customers the ...
As billions of people around the world adopt more flexible lifestyles, stable connections to the cloud via Wi-Fi, 4G and 5G are vital, writes Mike Becker of Nexperia. To manage this, the growth in hyperscale computing solutions and high-speed 5G telecom systems continues unabated. At the same time operators are seeking to squeeze higher performance levels and improved efficiency into ...
Chinese GaN device maker Innoscience is introducing a bi-directional transistor amongest its more conventional devices. Called INN40W08, it is a 40V device that can block in both directions (unlike single silicon mosfets where two are needed for bi-directional operation). Innoswitch announced an up-dated version here Nominally it has a gate, two drains and no source. The company sees it being ...
Nexperia has announced ±1% Zener diodes from 1.8 to 75V in E24 steps. BZT52H-A SOD123F 2.6 x 1.6 x 1.1mm (plus leads) and BZX384-A SOD323 1.7 x 1.25 x 0.95mm (plus leads) are described as the company’s ‘A-selection’, hence the suffix in the name. “By replacing B- or C-selection devices with pad compatible A-selection Zener devices, engineers can go to the ...
Infineon is aiming at high switching frequency applications dc-dc converter applications such as telecom and solar with its OptiMOS 6 family of 100V mosfets. Compared with OptiMOS 5, the company is claiming: Rds(on) better by 18% Qg x Rds(on) better by 29% Qgd x Rds(on) better by 42% “In a 600W, 36-60V to 12V zero-voltage switched buck-boost converter, OptiMOS 6 in SuperSO8 with 2.2mΩ can achieve 1% ...
