The new devices feature the company’s 8th generation BiCS FLASH 3D flash memory technology. It highlights this as introducing CMOS directly Bonded to Array (CBA) technology. There is also an integrated controller in a JEDEC-standard package.
Kioxia says the QLC UFS memory design suits read-intensive applications and high-capacity storage needs. For example, AV/VR and AI-enabled devices, as well as smartphones and tablets.
Other features of note, according to the company, include support for its WriteBooster technology (enabling/disabling the pSLC Buffer). This is for faster write speeds. And there is a smaller package size in comparison to the previous QLC UFS: from 11×13 mm down to 9×13 mm.
“At KIOXIA, innovation in flash memory is central to how we respond to increasing requirements for capacity and performance,” said Axel Störmann, CTO of Kioxia Europe. “With QLC UFS 4.1, the latest advances in architecture and design are translated into practical capabilities that help our customers address increasingly complex and diverse mobile and connected use cases.”
They are available in 512GB and 1TB capacities.
Note, the UFS 4.1 specification is backward-compatible with UFS 4.0 and UFS 3.1.
Kioxia brought the quadruple-level cell technology to UFS 4.0 in October 2024.
