Memory

Cypress plans to use the embedded flash process in its next generation PSoC programmable system-on-chip products

Hynix and Toshiba are to collaborate in the development and manufacturing of MRAM with the objective of accelerating commercialisation of the technology.

STMicroelectronics has launched a 32kbit EEPROM which can write a 2kbit sector in under 1ms. It’s for storing data when an unexpected event, like a power failure, occurs.

Samsung is looking to cut server heat with "20nm-class" DRAM chips, it said. The firm is secretive about process details, and by 20nm-class it means 20-29nm feature size. "We plan to ship...

Ferroelectric RAM is claimed to be much lower power and with faster write speed than EEPROM and flash

“There is a current void in the consumer, medical and computing sectors for increased security in microcontroller-based applications," said Kerry Maletsky, cryptographic product line director, Atmel

After delays and disputes, the Singapore fab of IM Flash – the Intel-Micron flash jv – has held an opening ceremony attended by the Prime Minister of Singapore, Lee Hsien Loong.

Toshiba and SanDisk will sample 19nm NAND flash as from the end of this month and plan to mass produce it in Q3.

Samsung has signed a NAND flash memory supply agreement with solid state drive firm Seagate Technology as part of a wider strategic relationship

Intel and Micron are sampling a 64Gbit NAND MLC flash chip made 20nm process and will be in volume production by the end of the year. By year-end Intel and Micron expect to sample a 128Gbit memory made on the process.