Rohm

Rohm, Toshiba and Mitsubishi Electric are to start talks ​to integrate their power semiconductor businesses, reports the Nikkei The talks come shortly after Denso made an $8.3 billion bid to buy Rohm. Last week Rohm said it had set up a ​committee of ⁠outside directors and others to review Denso’s proposal, alongside other options to boost its corporate value. A ...

Rohm is using its new HPLF5060 package (4.9mm × 6.0mm) to expand its lineup of low-voltage (40V/60V) MOSFETs for automotive applications. For example, main inverter control circuits, electric pumps, and LED headlights. Parts include the AG040FGS4FRA, the AG142FGS4FRA and AG543EGS4FRA, under the company’s EcoMOS brand. HPLF5060 package Rohm highlights the trend for automotive low-voltage MOSFETs moving towards smaller packages. It ...

Infineon and Rohm have signed an MoU to collaborate on packages for silicon carbide (SiC) power Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from ...

Rohm has introduced a tiny nano-power rail-to-rail op-amp for sensor amplification, in a 910 x 800μm WLCSP (wafer-level chip-scale package). TLR1901GXZ, as it will be known, is CMOS and has a maximum input offset voltage of 550μV (3Vdd 25°C), drifting at 7μV/°C. Operation is across 1.7 to 5.5V and -40 to +85°C, and typical supply current is 160nA (at 3Vdd, ...

Rohm has released hybrid analogue-digital controlled design for a 24V 4A output mains PSU built around its ML62Q2035 16bit RISC MCU. The design, called REF67004 and implemented on the LogiCoA003-EVK-001 evaluation board, incorporates a critical conduction mode PFC (power factor correction) stage followed by an isolated quasi-resonant fly-back converter. “Analog-controlled power supplies are widely used in small to medium-power industrial ...

Rohm has introduced a tiny 20A 30V common-source dual mosfet for switching power rails on and off. On-resistance in AW2K21 is typically 2mΩ  and comes in a 2 x 2mm WLCSP. It “adopts a proprietary structure that enhances cell density while minimising the on-resistance per unit chip area – even compared to similarly sized GaN hemts, on-resistance is decreased by ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 x 8mm DFN8080 package. “In hot-swap circuits used to safely replace modules while servers remain powered on, mosfets are required that offer both wide safe operating area and low on-resistance to protect against ...

Rohm has created three n-channel power mosfets in 5 x 6mm DFN packaging. RS7E200BG is a 30V mosfet optimised for both secondary-side ac-dc conversion and hot-swap controllers in 12V enterprise server power supplies. RS7N200BH is an 80V mosfet optimised for secondary ac-dc conversion in 48V server power supplies, as is RS7N160BH. “The DFN5060-8S package increases the internal die size area ...

Rohm has formerly announced the TOLL-packaged 650V GaN hemts that Electronics Weekly featured in a GaN driving trechnology article last week. To get the devices, called GNP2070TD-Z, into the increasingly popular ~12 x 10 x 2.4mm TOLL (TO-lead-less) package, which is finding use in high power industrial and automotive equipment, Rohm chose to out-source the back-end to ATX Semiconductor (Weihai) ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly modified for clarity). It is a classic bootstrapped circuit (explained far below) for driving silicon mosfets, but the gates of GaN hemts are far fussier that Si mosfets: a little below ...