Home » Tag Archives: GaN

GaN

Gallium Nitride (GaN) is transforming power electronics, offering higher efficiency and performance in power conversion, solar energy, and 5G infrastructure. Innovations in GaN semiconductors enable faster switching speeds, smaller form factors, and better heat dissipation, making them ideal for electric vehicles, data centers, and telecommunication systems. With the growing demand for energy-efficient systems and green technologies, GaN is quickly becoming a crucial material in the electronics industry, pushing the boundaries of power management and driving global progress in sustainable electronics solutions.

Power Integrations extend TOPSwitch IC range with PowiGaN tech

Power Integrations TOPSwitchGaN APEC 2026

APEC 2026: Power Integrations has implemented its GaN technology in its TOPSwitch flyback ICs to increase the power range to 400W. The company’s PowiGaN technology means that the flyback converters more than double power output to extend the power range above the conventional 250W to 440W for faster charging for e-bikes, mobility devices and industrial applications. They also exceed ErP ...

RF GaN on 11% CAGR to hit $2.4bn in 2031

NXP-MRF24G300HS-2450-Ref-Circuit

RF GaN is on a strong growth trajectory, says Yole, with the  market expected to reach ~$2.4 billion by 2031. Defence is the main growth engine, heading toward ~$1 billion in RF GaN revenues by 2031. The RF GaN value chain is highly compartmentalized, with largely separate U.S., European, and Chinese ecosystems. GaN-on-SiC remains the dominant platform across high-power telecom ...

GaN on SiC driver amplifier

IMG_1667.webp

Qorvo’s QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides a low-cost driver solution that provides the added benefit of operating on ...

GlobalFoundries-onsemi partnership to develop 200mm GaN portfolio

onsemi Dinesh Ramanathan Global Foundries

Globalfoundries (GF) and onsemi have signed an agreement to develop and manufacture advanced GaN power products using GF’s 200mm eMode GaN-on-silicon process. The focus for initial development will be 650V power devices for AI datacentres, electric vehicles, renewable energy, industrial systems,  aerospace, defence and security. “This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to ...

GaN-based motor driver for robot limb joints

EPC91120 robot joint motor drive evaluation board circuit diagram

EPC has designed a GaN-based motor driver for robot limb joints. EPC91120, as it is know, is a evaluation board implementing a three-phase brushless dc motor driver in a 32mm diameter circular footprint designed to be built directly into robotic motor assemblies – particularly with the Unitree A1 motor, which is part of a robot dog. “We used the Unitree ...

42% GaN CAGR driven by consumer, auto and datacentre, says Yole

IMG_1363-300x200.webp

The power GaN device market is expected to be a $3 billion market by 2030 with a 42% CAGR from 2024 to 2030, says Yole. Consumer electronics is a leading adopter with power GaN continuing to dominate the fast-charger segment. There is emerging momentum in automotive and mobility despite short-term delays linked to the xEV market slowdown. xEV GaN demand ...

Onsemi announces vertical GaN power transitors

Onsemi vertical GaN image

Onsemi has announced vertical GaN power devices, which it said are with early access customers in 700V and 1,200V form. “Developed and manufactured at Onsemi’s fab in Syracuse, New York, Onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology,” according to the company. “Compared to commercially available ...

Joint power laboratory for GigaDevice and Navitas

GigaDevices Navitas joint laboratory

GigaDevice and Navitas have created a joint digital power laboratory, intending to combine GigaDevice’s 32-bit microcontroller products and expertise with power components and related knowledge from Navitas. “The collaboration aims to deliver intelligent and high-efficiency digital power solutions for emerging markets such as AI data centres, photovoltaic inverters, energy storage systems, charging infrastructure and electric vehicles,” according to GigaDevices.  “Before ...

Power semiconductor tester for SiC and GaN

Microtest Quasar200 E Pulsar600

ipTest has announced a pair of wide bandgap power device testers for measuring GaN and SiC transistors, aimed at academic researchers as well as engineers developing power products. Quasar200 is for dc and ac evaluations of silicon, galium nitride and silicon carbide devices. Pulsar600 is a higher current version – for shorts up to 10kAac – particularly suited to testing ...

800V data centres: Navitas down-converts 35kV

800V data centre architecture Navitas

Navitas has revealed its proposals towards Nvidia’s ‘AI factory’ data centre concept in which power is distributed at 800Vdc, revealing both grid-voltage and 800V power converters. With power consumption estimated at 1MW per rack, the front-end of the data centre will need to receive three-phase grid power at ~14kV or ~35kV. Eschewing a multi-tonne grid-frequency transformer to produce three-phase 480Vac ...