The focus for initial development will be 650V power devices for AI datacentres, electric vehicles, renewable energy, industrial systems, aerospace, defence and security.
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets,” said Dinesh Ramanathan, senior vice-president of corporate strategy, onsemi (pictured).
“We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production,” he added.
GF said that its eMode (enhancement mode) MISHEMT (metal insulator semiconductor high electronic mobility transistor) technology uses GaN grown on a silicon substrate and is primarily for high performance, power-efficient wireless communications including datacentre, industrial and automotive applications, which require high voltage, high frequency performance.
onsemi will pair its silicon drivers, controllers and thermally enhanced packages with GF’s 650V GaN technology to optimise devices with higher power densities. The portfolio will include power supplies and DC-DC converters for AI datacentres, onboard chargers and DC-DC converters for electric vehicles, solar microinverters, energy storage systems, motor drives and DC-DC converters for industrial, aerospace, defence and security applications, said onsemi.
Sampling will begin in the first half of 2026.
