UK-based e2v claims to have created the highest density MRAM device in the industry. The firm uses a stacked-package to create a 32Mbit MRAM-based product in a 54-pin TSOP. The EV5A16B integrates two 16Mbit MRAM devices from Everspin Technologies. According to e2v, the attraction of MRAM technology is that it can offer SRAM-like 35ns read/write timing but with data retention and ...
Micron Technology has announced a terabyte solid state drive (SSD) which it claims will have quick boot-up and will draw as little as 0.15W during normal operation. The NAND flash drive has a speed of up to 95,000 input/output operations per second. The drive’s sequential speeds reach up to 550Mbyte/s for reads and 500Mbyte/s writes, which maxes out the capabilities of the SATA 6 Gb/s ...
The pressure to find an alternative mainstream non-volatile memory to NAND is now much less urgent following the development of vertical NAND structures which stack memory cells on top of eachother.
Toshiba will launch a range of CompactFlash memory cards for the DSLR camera market in spring 2013
Based on PMC-Sierra's SRC 8x6G RoC and ARC RAID stack, Adaptec Series 6 controllers are family of low-profile MD2 form factor Unified Serial RAID adapters offer
The devices’ built-in byte-mode erasing capability allows easy parameter update; and 128-byte page write, together with 5ms write time, results in rapid program
Ramtron has launched power efficient 512-Kbit and 1-Mbit serial F-Ram V-family memory.
Toshiba 512GByte solid state drive and next-generation SSD family uses 43nm MLC NAND.
Austin Semiconductor smaller, more compact 7.5 cm3 (31mm sq x 7.8mm max height) ruggedized solid state disk (SSD).
Toshiba and Toshiba Electronics Europe 43nm single-level cell (SLC) NAND Flash memory products are available in densities ranging from 512Mbits to 64Gbits and i
