Nexeon has commissioned its South Korean silicon-based electrode material plant. “The silicon-carbon materials produced at the Gunsan facility are designed to increase the energy density and charging speed of lithium-ion batteries, addressing performance requirements for the electric vehicle and consumer electronics markets,” said CEO Scott Brown. Gunsan, according to the company, is an industrial hub with a reliable supply monosilane ...
Silicon
Silicon remains the foundation of semiconductor innovation, enabling high-performance ICs and integrated systems. Developments in silicon processing, doping, and wafer fabrication enhance device efficiency and scalability. Electronics Weekly tracks silicon technology breakthroughs, foundry capabilities, and their critical role in powering modern electronics across industries.
All-silicon RC snubber for silicon carbide mosfets
Melexis is creating all-silicon RC snubbers for integrating within silicon carbide power modules. Currently sampling to potential customers, the parts will all be variants of the new part number ‘MLX91299’, and be delivered as a bare die ready for top-side wire-bonding alongside mosfet and diode die inside the power module. The back metallisation is compatible with both sintering and soldering. ...
7A capacitively-isolated gate driver
Littelfuse has launched a single-channel isolated gate driver typically capable of delivering ±7A and ±4A at minimum. IX3407B, as it will be known, uses a 2.5kV capacitive isolation barrier (3kV for 1s) and can withstand 150kV/μs transients. The inputs’ thresholds are compatible with 3.3V logic and there are separate pull-up and pull-down outputs so that resistors can be used to ...
Monolithic integration of III-V lasers in silicon ICs
The University of California Santa Barbara has improved the integration of monolithic III-V lasers on silicon substrates. What has emerged from the research are narrow-band well-behaved lasers that are compatible with mass manufacturing. “The lasers operate efficiently on a single O-band wavelength,” according to the IEEE Photonics Society, which has published the projects findings. “O-band is desirable as it allows ...
Edinburgh start-up reveals two camera chips with single-photon pixels and DSP
Singular Photonics has spun out of the University of Edinburgh to offer two ultra-sensitive camera chips based on SPADs – single-photon avalanche detectors. Both have in-sensor digital signal processing. Development has been lead by Professor Robert Henderson, head of Edinburgh’s CMOS Sensors and Systems Group, and a pioneer of SPAD-based image sensors: he co-designed one in 2005, and in 2013 ...
Industry unites to drive photonic chip applications
PhotonDelta, the European hub for photonics, will launch a worldwide competition for new applications for photonics chips at PIC Summit 2024 (Eindhoven 15 October). Partners include imec, LioniX International, Smart Photonics, Phix Photonics Assembly, Ephiphan and Bright Photonics and engineering community platform Werolver. Engineers are invited to use photonics ICs in designs to tackle challenges in, for example, healthcare, AI, ...
Murata opens 200mm silicon capacitor line in Caen
Murata has opened a 200mm silicon capacitor manufacturing line at the French campus it acquired with IPDiA in 2016. “With the launch of this new line, we are continuing to invest in growing our production facilities and our local workforce,” said Murata Manufacturing president Norio Nakajima (picured). “It represents a significant step forward in our growth in the sector and ...
112 x 62mm IGBT module for 1kV flying capacitor boost converters
Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...
80 and 100V mosfets in 5×6 and 8×8 LFPAK
Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...
300mm silicon-based quantum dot spin qubits
Imec has used 300mm wafers to demonstrate silicon-based quantum dot spin qubit processing. The devices had an average charge noise of 0.6µeV/√Hz at 1Hz. “In view of noise performance, the values obtained are the lowest charge noise values achieved on a 300mm fab-compatible platform,” according to the Belgian research lab. “By demonstrating those values, repeatedly and reproducibly this work makes ...
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