IGBT

Power component maker Cissoid is announcing an IGBT power module aimed at industrial power conversion systems, the CMT-PLA1BL12300MA. CMT-PLA1BL12300MA The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate. The company highlights low saturation voltage and ...

Littelfuse has launched a single-channel isolated gate driver typically capable of delivering ±7A and  ±4A at minimum. IX3407B, as it will be known, uses a 2.5kV capacitive isolation barrier (3kV for 1s) and can withstand 150kV/μs transients. The inputs’ thresholds are compatible with 3.3V logic and there are separate pull-up and pull-down outputs so that resistors can be used to ...

Dow is aiming at IGBT modules with its latest silicone gel, to support operation up to 180°C in 800V vehicles and renewable energy. “In PV panels and wind turbines, the power densities of inverters are increasing,” said the company. “With higher junction temperature associated with higher voltages and greater electrical loads of the 7th generation IGBT technology, a silicone gel ...

STMicroelectronics is aiming at domestic induction hobs and microwaves with a 1.6kV IGBT in a long lead TO-247 package. “STGWA30IH160DF2 IGBT combines high thermal performance with efficiency in soft-switching topologies and easy paralleling,” claimed the company. Nominal current rating is 30A (120A pulsed), and the device works with its junction up to 175°C. Thermal resistance is 0.36°C/W junction-to-case, and 0.81°C/W for ...

Littelfuse has introduced a 200V half-bridge mosfet and IGBT driver with integrated cross-conduction protection logic, said the company. IXD2012NTR, as it will be known, is designed to drive n-channel mosfet gates that need between 10 and 20V, and can supply a minimum of 1.4A pull-up and 1.8A pull-down (both into short-circuits) from either output. Typical figures are 1.9 and 2.3A ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN hemts in parallel with large silicon IGBTs, and has been branded ‘Combo ICeGaN ‘. “Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, ...

TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new parts, called the EP9 series and aimed at both IGBTs and mosfets, are built on a MnZn ferrite core with surface-mount L-pin construction. Creepage and clearance is 5mm, peak withstanding is 2.5kVac 50Hz, and coupling capacitance is ...

Vishay has stretched an SO-6 package to accommodate 1kV operation from opto-based mosfet and IGBT gate drivers. The body is ~7mm from end to end and creepage is 8mm. Clearance is 7mm for the ‘option 9’ package which has conventionally bent legs, or 8mm for the ‘option 8’ package which has widely-splayed legs (see image). Peak working voltage is 1.14kV ...

A $3.5 billion foundry contract, the road ahead for Intel, AMD launching auto-qualified FPGAs, Intel securing a customer for its 18A process, and alternatives for IGBTs...

BEC Distribution has announced the availability of high-quality Alternatives for STMicroelectronics and onsemi IGBT Transistors. They are available on a 4-6 weeks lead time with free samples provided on request. BEC’s Insulated Gate Bipolar Transistors (IGBTs) provide maximum reliability combined with high-voltage, high-current characteristics. They feature a low saturation voltage and a high current capability combined with controlled junction temperatures ...