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Electronics related to industrial applications

PCIM: 40V 0.8mΩ GaN power transistor for synchronous rectification

EPC90143 GaN power transistor dcdc dev board

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beach-head across low-voltage applications that have long been dominated by silicon,” said EPC CEO Alex Lidow. Packaged in 3.3 x 2.6mm ...

Telonic offers Siglent’s enhanced precision digital multimeters

SDA4000 series digital multimeters from Siglent Technologies available from Telonic Instruments

The SDM4000A series 5½-digit and 6½-digit digital multimeters (DMMs) by  Siglent Technologies are now available in the UK from Telonic Instruments. The SDM4000A series DMMs offer 2,200,000 counts for the 6½-digit resolution model; or 220,000 for the 5½-digit DMM and a full-scale display range from -2,199,999 to +2,199,999. Reading rate is 50,000 readings/s and the minimum sampling interval is 20-µs. ...

Hardware Pioneers Video: Future-Proofing Industrial Embedded Electronics: Expert Solutions for Manufacturers

ByteSnap-Design-video-HP-300x180.webp

At Hardware Pioneers Max 2025 we caught up with Dunstan Power, Director and Co-Founder of ByteSnap, as part of our promotional coverage for the event. He explains how industrial manufacturers can navigate today’s technical challenges, including implementing FPGA solutions, modernising systems, extending product lifecycles, and managing obsolescence without costly redesigns. He also shares insights from his new industry report on ...

Opto-isolated SiC gate driver with active Miller clamp

Toshiba TLP5814H SiC gate driver

Toshiba has introduced an opto-isolated SiC gate driver, that includes an active Miller clamp to tame self-turn-on behaviour in the driven device. Named TLP5814H, it is a “gate driver photocoupler suitable for driving silicon carbide mosfets in industrial equipment like inverters, uninterruptible power supplies and photovoltaic inverters which experience harsh thermal environments”, according to the company. “The Miller clamp circuit ...

Low-drop 2,000V rectifiers in TO247

WeEn TO247 2000V rectifier packaging

WeEn Semiconductors has unveiled a pair of 2,000V rectifiers in TO247 packaging, one rated at 90A and the other at 60A. They are the WND90P20W  and the WND60P20W respectively. “These devices are engineered to mitigate voltage spikes in electric vehicle charging loads,” according to the company, which went on to emphasise their  forward voltage drop and thermal resistance. Digging into ...

Click board includes 85V 10A stepper motor driver

Mikroe PowerStep2 Click stepper driver board

Mikroe has added a smart 85V 10A stepper motor driver to its range of interchangeable ‘Click’ boards. Called Power Step 2 Click, the board “is based on the powerSTEP01, a 1/128 microstepping controller from STMicroelectronics that integrates eight n-channel mosfets with ultra-low Rds(on)”, according to Mikroe. “It features a 5MHz SPI interface, multiple safety protections, and additional control pins for ...

1,200V SiC mosfets are avalanche tested to 800mJ

Semiq GCMX040B120S1-E1 SiC mosfet

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four devices: GCMS008C120S1-E1 8.4mΩ with Schottky GCMX008C120S1-E1 8.4mΩ GCMS016C120S1-E1 16.5mΩ with Schottky GCMX016C120S1-E1 16.5mΩ The resistance figures here are the channel on-resistance. In addition, two more are avalanche tested ...

200V half-bridge mosfet driver

Littelfuse IXD2012N half-bridge mosfet driver block

Littelfuse has introduced a 200V half-bridge mosfet and IGBT driver with integrated cross-conduction protection logic, said the company. IXD2012NTR, as it will be known, is designed to drive n-channel mosfet gates that need between 10 and 20V, and can supply a minimum of 1.4A pull-up and 1.8A pull-down (both into short-circuits) from either output. Typical figures are 1.9 and 2.3A ...

1,200V silicon carbide three-phase mosfet bridge

Semiq GCMX080A120B2T1P three phase SiC bridge package

SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W GCMX080A120B2T1P Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C. Each is tested to over 1,350V with 100% wafer-level ...

650V SiC Schottkys from 4A to 12A

Diodes DSCxxA065LP 650V SiC diode

Diodes has introduced some 650V SiC Schottky diodes, rated at 4, 6, 8, 10 or 12A. Called the DSCxxA065LP series, they come in a 8 x 8 x 1mm T-DFN8080-4 package. The company claims a leading Qc x Vf figure-of-merit, but does not include the numbers in its data sheets, so Electronics Weekly unleashed its calculator to find typical 25°C ...