There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, including a reverse-parallel Schottky diode.
The modules “are tested beyond 1,400V and target battery chargers, photovoltaic inverters, server power supplies and energy storage systems”, according to the company. “GCMS modules, which feature Schottky barrier diodes, have lower switching losses at high temperature, especially compared to non Schottky diode GCMX modules.”
So, how much lower?
“Under typical operating condition from datasheet AC electrical characteristic table, the [Schottky-inclusive] 7.3mΩ GCMS007C120S1-E1 reduces switching losses from 5.03mJ to 4.9mJ with increasing junction temperature from 25°C to 175°C, whereas [non-Schottky] 7.4mΩ GCMX007C120S1-E1 shows increased switching losses from 4.7mJ to 6mJ,” the SemiQ told Electronics Weekly.
And how do the devices compare with earlier models from SemiQ?
“The technical advantages are lower Rdson and lower switching loss reduction, with the trade-off of lower threshold voltage to target higher switching speed applications,” it said.
The company singled out the non-Schottky 7.4mΩ GCMX007C120S1-E1, for further specification numbers: its claims 4.66mJ (3.72mJ on, 0.94mJ off) switching loss at 25°C, 800V, 100A with a -4.5 to +18V gate drive, and 593nC reverse recovery charge from the mosfet’s body diode under the same conditions.
Across the range, junction-to-case thermal resistance ranges typically from 0.23°C/W for 7.4mΩ types, rising to 0.70°C/W for the 34mΩ versions.
As well as the 1.4kV test, all 7.4 and 15mΩ parts are avalanche tested to 800mJ, while 34mΩ modules get 330mJ.
| GCMxxxxC120S1-E1 | Current | Rds(on) | Schottky |
| …S007… | 189A | 7.3mΩ | yes |
| …S014… | 103A | 15mΩ | yes |
| …S034… | 53A | 34mΩ | yes |
| …X007… | 192A | 7.4mΩ | no |
| …X014… | 104A | 14.5mΩ | no |
| …X034… | 51A | 34mΩ | no |
Of the 7.4mΩ SOT-227 mosfets, find the Schottky-inclusive 7.3mΩ GCMS007C120S1-E1 on this SemiQ web page and the non-Schottky 7.4mΩ GCMX007C120S1-E1 here
The above devices are very similar to six similarly-packaged mosfets the same company released in April, also labelled ‘3rd generation’ by SemiQ, so Electronics Weekly asked what the difference, and ‘threshold voltage’ was the reply:
Gen3 higher threshold voltage versions – 3.6V – are released targeting, better stability at high temperature, higher immunity to gate loop noise and Miller-shoot through robustness. Gen3 lower threshold voltage versions – 2.8V – is released targeting overall lower total losses for higher switching frequency application.
