MOSFET

Rohm is using its new HPLF5060 package (4.9mm × 6.0mm) to expand its lineup of low-voltage (40V/60V) MOSFETs for automotive applications. For example, main inverter control circuits, electric pumps, and LED headlights. Parts include the AG040FGS4FRA, the AG142FGS4FRA and AG543EGS4FRA, under the company’s EcoMOS brand. HPLF5060 package Rohm highlights the trend for automotive low-voltage MOSFETs moving towards smaller packages. It ...

The AOTL037V60DE2, a 600V mosfet from Alpha and Omega Semiconductor (AOS), is its first high-voltage product to use the company’s αMOS E2 600V Super Junction MOSFET platform. Addressing high efficiency and high-power density demands, targets a range of applications. For example, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. AOTL037V60DE2 The AOTL037V60DE2 is available in ...

Toshiba has launched a 47mΩ 600V n-channel super-junction mosfet in an 8 x 8mm DFN package. With sufficient heatsinking, the device, TK057V60Z, can carry 40A continuously and pulses up to 160A. 47mΩ is the typical on-resistance while passing 15A with a 10V gate drive – maximum resistance under these conditions is 57mΩ. For more effective gate driving, the package includes ...

Aiming at 800V automotive battery management, Vishay has put a 1,500V Form A solid-state relay into a 10 x 10mm 4pin SMD-8 package. Back-to-back mosfets are used at the output to switch ac or dc voltages. VORA1150 has 1,414Vpeak repetitive isolation (and 8kV transients), and a maximum leakage of 1µA. “The 4pin design allows the device to provide a 5mm ...

Littelfuse has launched a single-channel isolated gate driver typically capable of delivering ±7A and  ±4A at minimum. IX3407B, as it will be known, uses a 2.5kV capacitive isolation barrier (3kV for 1s) and can withstand 150kV/μs transients. The inputs’ thresholds are compatible with 3.3V logic and there are separate pull-up and pull-down outputs so that resistors can be used to ...

Nexperia has four announced 100V automotive mosfets in a 12 x 12mm CCPAK1212 legged SMD package. This package saves “up to 40% PCB space compared to traditional TOLL or TOLT-packaged alternatives”, according to the company. There are bottom-cooled (CCPAK1212) and top-cooled (CCPAK1212i, pictured) versions (see table below). On-resistance is between 0.99 and 1.35mΩ, depending on the part, and a copper ...

Toshiba has launched three industrial 650V SiC mosfets in TOLL packaging, with on-resistance as low 27mΩ. “The TOLL package is a 9pin, four-terminal package designed to facilitate the use of a Kelvin connection for its signal source terminal for the gate drive,” said the company. “The surface mounting capability of the TOLL package allows for smaller parasitic impedance, which leads ...

Farnell Japan now offers customers Toshiba’s low-voltage mosfet portfolio, suitable for use in server AC-DC power supplies and basestation DC-DC converters. In May, Toshiba officially opened phase 1 of its Kaga wafer fab expansion. The facility in Japan’s Ishikawa Prefecture and brings online 300mm/12-inch wafer lines. Adrian Cotterill, Farnell’s power segment lead, commented: “Japan holds significant importance for us, and ...

Magnachip Semiconductor has brought out an 80V MXT MV MOSFET, MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. Unlike conventional TOLL (TO-Leadless) packages that dissipate heat through the bottom, the TOLT package is engineered to release heat directly from the top via a mounted metal heat sink. This structure reduces thermal resistance between the junction and the external environment, making ...

This week we're talking about the US Chips Act, getting an AI datacentre in 90 days, a small bi-directional dual mosfet, and LPD-S direct-to-sensor satellite IoT...