Mazda and Rohm have signed a deal to develop GaN-based automotive power electronics. “Compared to conventional silicon power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation,” according to Rohm. “Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in ...
Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to 125°C. Packaging is VQFN16, WLCSP22, WLCSP16 or WLCSP12. They “support overvoltage protection, load switching and battery management systems in mobile devices and laptop computers”, according to ...
What role could emerging cooling technologies play in making li-ion batteries more efficient? ask two specialists at Withers & Rogers. As lithium-ion batteries become smaller and therefore more power-dense, to fit inside compact domestic products, manufacturers are using cooling technology to ensure battery safety. However, this adds to the overall cost of manufacture. And this, ultimately, must be met by ...
The power module packaging materials market will reach almost $6.1 billion by 2030 with a CAGR of almost 11% between 2024 and 2030, says Yole Group. Packaging materials costs accounted for approximately 32% of the total cost of power modules in 2024. The power module packaging supply chain is continually being reshaped with newcomers, M&As, OEM strategy evolution and new ...
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five years”, it said. It is a 60V p-channel mosfet, and joins four n-channel space devices for 60V or 150V use in either TO247 or D2PAK plastic packaging. The p-channel, called BUP06CP038F-01, comes in DPAK (TO252) form ...
Amphenol has released the QEPT 4-TRX 200G NRZ, a 200Gbit per second high-speed optical pluggable transceiver module. The QEPT (Quad Embedded Pluggable Transceiver), capable of 56Gbit per second at distances up to 70m over the full temperature range of 0 to +70°C. The aggregate performance is 200Gbit per second over four channels. The module is in response to faster data ...
Supercapacitors are essential in energy harvesting, processing, and storage systems across various applications. As technology advances, supercapacitors are increasingly used in renewable energy, IoT devices, and more. Eaton Electronics, a leading supplier, offers a wide range of supercapacitors, from miniature components to larger modules for commercial vehicles. These components are crafted using both traditional and innovative technologies, providing versatile solutions ...
Aiming to displace circular metal power connectors, Amphenol has created the rugged plastic Amphe-PRB series of connectors with up to five contacts for handling one, two or three-phases. “The connectors feature a dedicated ground contact and are suitable for a range of applications in industries such as alternative energy, telecommunications and anything powered by electric motors, including electric or hybrid ...
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly modified for clarity). It is a classic bootstrapped circuit (explained far below) for driving silicon mosfets, but the gates of GaN hemts are far fussier that Si mosfets: a little below ...
Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that comes in a 4.9 x 6 x 1.65mm SOP-JW8 package. Made by Rohm and called BM6GD11BFJ-LB, they have “an isolation voltage of up to 2,500Vrms, a minimum input-output latency of 60ns and a minimum input pulse width of 65ns”, said Rutronik. “Under-voltage lock-out is integrated into the ...
