Designed for work in circuits with varied voltage levels. Until recently, a very common problem faced by electronic circuit designers was the difference in supply voltage standards between microcontrollers (e.g. 3.3 V) and peripheral ICs (e.g. 5 V). In order for them to operate together, the use of additional voltage translators was required, which made the device more complicated and ...
Cosel has used GaN transistors, planar magnetics and a modified fly-back topology to shrink a family of dc-dc power supplies. Called the TE series, the new supplies come in 45W (TECS45F and TEPS45F) and a 65W (TECS65F or TEPS65F) forms. TEPS versions have connections brought out to PCB pins and have a 1 x 2.3inch footprint, while TECS parts (right) ...
Team αCentauri, part-sponsored by Power Integrations, has just completed the 3,022km Bridgestone World Solar Challenge in Australia. It was the 12th and final finisher, ahead of the many teams that failed to finish, and quite a few that failed to start. It wasn’t only cash sponsorship, as a Power Integrations InnoSwitch3 fly-back converter powers low-voltage loads including the steering wheel ...
AI represents 4.3GW of power demand today, according to an estimate by Schneider Electric, growing at a CAGR between 26 and 36%, to reach 13.5 to 20GW by 2028. 4.3GW is about as much as Denmark consumes*. “This growth is two to three times that of overall data center power demand CAGR of 11%,” according to the company. “One key ...
Toshiba has launched a 200A 40V 0.66mΩmax automotive grade n-channel mosfet that can handle 600A pulses in a 7 x 8.44 x 2.3mm gull-wing package. “Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power mosfet with high current density is required due to the ...
Rohm has developed a range of five 100V dual mosfets for single-phase or three-phase bridges in fan motor drives. Four of them are dual n-channel in 5 x 6mm or 3.3 x 3.3mm packages, and one has one n-channel and one p-channel mosfet in the same 5 x 6mm package. “Recent years have seen a transition to higher voltages from ...
Ideal Power is aiming to compete with smart IGBT modules, with a 1.2kV 160A (100°C, 240A at 25°C) power module built around its novel ‘B-Tran’ bi-direction semiconductor switch. Called IPA01216DFx-HS, it comes in an industry-standard 62mm package which includes an isolated driver circuit and “has significant advantages compared to IGBT modules, including lower losses and inherent bidirectionality”, according to the ...
At Semicon Taiwan, Navitas Semiconductor announced GaNSafe, its fourth generation GaN technology. It is designed in a TOLL package to be rugged and protected in demanding environments and suitable for commercial applications in data centres, inverters in solar panels and onboard chargers in electric vehicles. The choice of a TOLL reduces the size compared to a QFN, explained Stephen Oliver, ...
A single capacitor can influence the lifetime and quality of entire electronic devices. These components wear out relatively easily and are used in virtually all circuits, including power supply modules, filters and voltage converters. Therefore, it is worth getting familiar with a range of brand-name components, such as Panasonic products, designed to ensure long-lasting and reliable operation. Nowadays, it is ...
Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...
