Dual diodes for microwave WPT

Nisshinbo Micro Devices has announced the NT9000/NT9001/NT9002/ NT9003 series of dual diode devices designed for Wireless Power Transfer (WPT).

The new series utilises the company’s proprietary GaAs wafer process technology and is designed to support highly efficient rectification in WPT systems by combining low forward voltage with high DC withstand voltage, enabling improved conversion efficiency over a wide dynamic range.

One of the central technical challenges in practical microwave WPT systems is the efficiency with which received microwave energy can be converted into usable DC power.

This requirement is particularly critical for IoT applications operating in low-power environments. The series addresses this challenge by offering a typical forward voltage of 0.1V, allowing rectifier circuits to achieve efficient DC conversion even with limited input power.

At the same time, the devices provide high DC to withstand voltage to maintain stable operation when input power increases, helping suppress device breakdown and limiting leakage current during rectification.

The NT9000 and NT9001 models are optimised for rectifier circuits in the 1W power class, while the NT9002 and NT9003 are designed for 1mW-class rectifier circuits.

This differentiation allows designers to select the most suitable device depending on the intended operating power range and application requirements.

All devices in the series operate across widely used frequency bands for wireless power transmission, including 920MHz, 2.4GHz, and 5.7GHz.

The diodes also feature low reverse leakage current and low capacitance characteristics that contribute to stable high-frequency rectification performance.

These electrical properties help designers achieve efficient RF-to-DC conversion in rectifier circuits and detectors used in WPT receivers.

Beyond WPT receiver circuits, these discrete diodes can also be utilised in other RF circuit applications that require efficient rectification or detection at microwave frequencies.

Nisshinbo Micro Devices continues to support system designers by providing design resources such as SPICE models and application notes to facilitate the development of rectifier circuits using these components.

The series is housed in a compact DFN1212-4-HD package measuring only 1.2×1.2 mm, integrating two diodes within a single package.

This small footprint reduces the required PCB mounting area and supports high-density circuit implementations. The package design is claimed to simplify rectifier circuit configurations, particularly in multi-stage rectifiers or bridge topologies where multiple diode devices are required.

For additional technical details, please refer to the datasheet or visit the official website, also view the list of qualified local and online distribution partners for purchasing information.

Specifications NT9000/NT9001/NT9002/NT9003: