Globalfoundries (GF) and onsemi have signed an agreement to develop and manufacture advanced GaN power products using GF’s 200mm eMode GaN-on-silicon process. The focus for initial development will be 650V power devices for AI datacentres, electric vehicles, renewable energy, industrial systems, aerospace, defence and security. “This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to ...
For brushed dc motors, Rohm has developed a pair of driver ICs. BD60210FV is for two 8 – 18V 1A motors (4A peak) and comes in a 5 x 6.4mm 16pad SSOP. It has a number of modes, including stand-by/forward/reverse over two wires, or stand-by/forward/reverse/brake over four wires, and as four half-bridges – to control a single two-phase stepper motor, ...
E-peas has announced an solar harvesting power management IC that can accept inputs from 5µA to 1A “spanning the full dynamic range of hybrid indoor-outdoor photo-voltaic cells”, it said. “These hybrid PV cells have a wide power output that can vary from microwatts under indoor lighting to several watts when in direct sunlight,” the company explained. With external components including ...
ST has added 65 Watt flyback converter in the VIPerGaN series that combines a 700V GaN transistor and quasi-resonant PWM control IC in a single QFN 5×6 package. VIPerGaN65W is aimed at cost-effective USB-PD chargers, fast battery chargers, and auxiliary power supplies. The flyback controller of these converters operates in quasi-resonant mode with zero-voltage switching (ZVS) up to the full ...
Melexis is creating all-silicon RC snubbers for integrating within silicon carbide power modules. Currently sampling to potential customers, the parts will all be variants of the new part number ‘MLX91299’, and be delivered as a bare die ready for top-side wire-bonding alongside mosfet and diode die inside the power module. The back metallisation is compatible with both sintering and soldering. ...
Toshiba has launched a 47mΩ 600V n-channel super-junction mosfet in an 8 x 8mm DFN package. With sufficient heatsinking, the device, TK057V60Z, can carry 40A continuously and pulses up to 160A. 47mΩ is the typical on-resistance while passing 15A with a 10V gate drive – maximum resistance under these conditions is 57mΩ. For more effective gate driving, the package includes ...
Aiming at 800V automotive battery management, Vishay has put a 1,500V Form A solid-state relay into a 10 x 10mm 4pin SMD-8 package. Back-to-back mosfets are used at the output to switch ac or dc voltages. VORA1150 has 1,414Vpeak repetitive isolation (and 8kV transients), and a maximum leakage of 1µA. “The 4pin design allows the device to provide a 5mm ...
AP7369Q is a series of 45V input low-drop-out linear regulators from Diodes that can provide up to 150mA to a load. Quiescent current can be as low as 2.1µA and, depending on variant, the output is fixed at 2.5V, 3.3V or 5V. “The device provides a very fast response against line voltage transient and load current transient, and ensures no ...
Toshiba is sampling a gate driver IC tailored for three-phase brushless DC (BLDC) motors for functions like power sliding doors, power back doors (power tailgates), and power seats, as well as electric pumps, fans, and motor generators. The TB9084FTG integrates essential functions for three-phase brushless motor drive, including a built-in charge pump circuit, a one-channel motor current sense amplifier, an ...
Rohde & Schwarz announced a dual-channel 3.6kW precision power supply at Productronica today. Called NGT3622 and rack-mountable, each of its channels will be rated up to 80V or 50A, and resolution (not necessarily accuracy) is “100µA for current and 1mV for voltage”, said the company. “NGT3622 combines two independent 1,800W outputs [which] can be combined in series or parallel, allowing ...
