{"id":829923,"date":"2023-11-02T15:48:30","date_gmt":"2023-11-02T15:48:30","guid":{"rendered":"https:\/\/www.electronicsweekly.com\/?p=829923"},"modified":"2023-11-02T16:03:38","modified_gmt":"2023-11-02T16:03:38","slug":"silicon-trench-capacitors-save-space-in-wearables","status":"publish","type":"post","link":"https:\/\/www.electronicsweekly.com\/news\/products\/passives\/silicon-trench-capacitors-save-space-in-wearables-2023-11\/","title":{"rendered":"Silicon trench capacitors save space in wearables"},"content":{"rendered":"<p><a rel=\"image\" href=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153827\/ROHM-BTD1RVFL-silicon-capacitors.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignright size-medium wp-image-829926\" src=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153827\/ROHM-BTD1RVFL-silicon-capacitors-300x218.jpg\" alt=\"ROHM BTD1RVFL silicon capacitors\" width=\"300\" height=\"218\" srcset=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153827\/ROHM-BTD1RVFL-silicon-capacitors-300x218.jpg 300w, https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153827\/ROHM-BTD1RVFL-silicon-capacitors.jpg 510w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a>Rohm has developed its first silicon capacitors, the 400 x 200 x 185\u03bcm ( 01005, 0402 metric) BTD1RVFL series which covers 100pF to 1nF.<\/p><div class=\"elect-content\" style=\"margin-left: auto; margin-right: auto; text-align: center; \" id=\"elect-2020206698\"><div id=\"x02\">\r\n<script type=\"text\/javascript\"> if ($(window).width() <= 768) { googletag.display('x02'); } <\/script>\r\n<\/div>\r\n<\/div>\n<p>&#8220;The mounting area is reduced by approximately 55% over general 0201 [0603 metric] products to just 0.08mm<sup>2<\/sup>.&#8221; according to the company. &#8220;Moreover, a built-in transient voltage suppressor protection element ensures high ESD resistance.&#8221;<\/p>\n<p>They are rated at 3.6V, with the internal bi-directional TVS breaking down between 8.2 and 9.2V.<\/p><div class=\"elect-post-content-2\" style=\"margin-left: auto; margin-right: auto; text-align: center; \" id=\"elect-1120459561\"><div id=\"DFP-EW-InRead1-Mobile\">\r\n<script type=\"text\/javascript\"> if ($(window).width() <= 768) { googletag.display('DFP-EW-InRead1-Mobile'); } <\/script>\r\n<\/div>\r\n<\/div><div class=\"elect-test\" style=\"margin-left: auto; margin-right: auto; text-align: center; \" id=\"elect-1736562235\"><div id=\"DFP-EW-InRead1\">\r\n<script type=\"text\/javascript\"> if ($(window).width() > 768) { googletag.display('DFP-EW-InRead1'); } <\/script>\r\n<\/div>\r\n<BR>\r\n<\/div>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-829925 alignleft\" src=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153825\/Rohm-silicon-trench-capacitor-300x123.jpg\" alt=\"Rohm silicon trench capacitor\" width=\"300\" height=\"123\" srcset=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153825\/Rohm-silicon-trench-capacitor-300x123.jpg 300w, https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153825\/Rohm-silicon-trench-capacitor.jpg 761w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/p>\n<p>Trenching is used to increase capacitance per unit area, and, being made from silicon, the devices step outside the usual three-character ceramic capacitor temperature coefficient labelling system. Operation is over -55 to +150\u00b0C with a \u00b1250ppm\/\u00b0C coefficient. Capacitance tolerance is \u00b115%.<\/p>\n<p><a rel=\"image\" href=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153821\/Rohm-silicon-capacitor-geometry.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignright size-medium wp-image-829924\" src=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153821\/Rohm-silicon-capacitor-geometry-300x106.jpg\" alt=\"Rohm silicon capacitor geometry\" width=\"300\" height=\"106\" srcset=\"https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153821\/Rohm-silicon-capacitor-geometry-300x106.jpg 300w, https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153821\/Rohm-silicon-capacitor-geometry-768x270.jpg 768w, https:\/\/static.electronicsweekly.com\/wp-content\/uploads\/2023\/11\/02153821\/Rohm-silicon-capacitor-geometry.jpg 798w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a>&#8220;Miniaturisation technology allows processing in 1\u00b5m increments that eliminates chipping during external formation and improves dimensional tolerances within \u00b110\u00b5m,&#8221; said the company. &#8220;This small variation in product size enables mounting with a narrower distance between adjacent components. At the same time, the backside electrode used for bonding to the substrate has been expanded to the periphery of the package to improve mounting strength.&#8221; Total pad area for bonding is ~0.032mm<sup>2<\/sup>.<\/p>\n<p>Two parts are available, with five more following:<\/p>\n<table>\n<thead>\n<tr>\n<td><a rel=\"image\" href=\"https:\/\/www.rohm.com\/products\/capacitors\/silicon-capacitors\/btd1rvfl102-product\" target=\"_blank\" rel=\"nofollow noopener\">BTD1RVFL102<\/a><\/td>\n<td>1,000pF<\/td>\n<\/tr>\n<\/thead>\n<tbody>\n<tr>\n<td>BTD1RVFL681*<\/td>\n<td>680pF<\/td>\n<\/tr>\n<tr>\n<td><a rel=\"image\" href=\"https:\/\/www.rohm.com\/products\/capacitors\/silicon-capacitors\/btd1rvfl471-product\" target=\"_blank\" rel=\"nofollow noopener\">BTD1RVFL471<\/a><\/td>\n<td>470pF<\/td>\n<\/tr>\n<tr>\n<td>BTD1RVFL331*<\/td>\n<td>330pF<\/td>\n<\/tr>\n<tr>\n<td>BTD1RVFL221*<\/td>\n<td>220pF<\/td>\n<\/tr>\n<tr>\n<td>BTD1RVFL151*<\/td>\n<td>150pF<\/td>\n<\/tr>\n<tr>\n<td>BTD1RVFL101*<\/td>\n<td>100pF<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>*under development<\/p>\n<p>Applications are foreseen in smartphones and wearables.<\/p>\n<p>A second series, scheduled for introduction next year, is being developed with improved high-frequency characteristics (lower ESR and lower loss) for RF applications, and then a higher voltage third generation is planned for industrial and automotive use in 2026.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Rohm has developed its first silicon capacitors, the 400 x 200 x 185\u03bcm ( 01005, 0402 metric) BTD1RVFL series which covers 100pF to 1nF. &#8220;The mounting area is reduced by &#8230;<\/p>\n","protected":false},"author":2,"featured_media":829925,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[12660,12695,12652],"tags":[13372,14601,13757],"class_list":["post-829923","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-embedded-systems","category-internet-of-things","category-passives","tag-capacitor","tag-rohm","tag-silicon"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v26.7 (Yoast SEO v27.2) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>Silicon trench capacitors save space in wearables | Electronics Weekly<\/title>\n<meta name=\"description\" content=\"Rohm has developed its first silicon capacitors, the 400 x 200 x 185\u03bcm ( 01005, 0402 metric) BTD1RVFL series which covers 100pF to 1nF. &quot;The mounting area\" \/>\n<meta name=\"robots\" content=\"index, follow, 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