It uses U-MOS11-H technology, highlights Toshiba, to deliver ultra-low on-resistance, fast switching and improved EMI performance in switched-mode power supplies. For example, by minimising voltage spikes generated between the drain and source during switching.
TPHR6704RL
The company writes:
“By adopting the U-MOS11-H process, the TPHR6704RL achieves a typical drain-source on-resistance (RDS(ON)) of 0.52mΩ at a gate-source voltage (VGS) of 10V, and a maximum RDS(ON) of 0.67mΩ at a VGS of 10V. Compared to the existing 40V product (TPHR8504PL) manufactured using the U-MOS IX-H process, the RDS(ON) is approximately 21% lower.”
“In addition, the switching performance of the new device improves, with a typical total gate charge (Qg) of 88nC and a gate switch charge (QSW) of 24nC, resulting in a reduction in the RDS(ON) × Qg figure-of-merit by approximately 37%, enabling low-loss operation.”
Drain current
The TPHR6704RL has a drain current (ID) rating of up to 420A and a channel-to-case thermal resistance of 0.71°C/W at 25°C.
The device operates over a wide temperature range, highlights Toshiba, with a maximum channel temperature (Tch) of 175°C, for operation in demanding industrial environments.
The MOSFET is housed in the SOP Advance (N) package. This provides compatibility with existing SOP Advance designs, simplifying replacement and board-level upgrades.
You can find more information about the TPHR6704RL on the Toshiba website, including the datasheet.
