Addressing high efficiency and high-power density demands, targets a range of applications. For example, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems.
AOTL037V60DE2
The AOTL037V60DE2 is available in a TOLL package and features a maximum RDS(ON) of 37 milliohms. According to the company, it can withstand a di/dt of 1300A/µs under specific forward current (IF) conditions at a junction temperature of 150 °C.
AOS highlights it features a robust intrinsic body diode to handle hard commutation scenarios. For example, reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short‑circuits or start‑up transients.
The AOTL037V60DE2 (600V 37mOhm TOLL) is available in production quantities with a lead time of 16 weeks, says AOS. The unit price, in 1,000-piece quantities, is $5.58.
MOSFET
“We designed this platform and the first high-voltage MOSFET to address the needs of traditional AC/DC power supplies, as well as DC/DC converters and DC/AC inverters, where achieving high power density and efficiency remains a critical challenge,” said said Simon Yu, Senior Product Line Manager at AOS.
“Leveraging AOS’ extensive MOSFET engineering expertise, we know the breakthrough capabilities of αMOS E2 High‑Voltage Super Junction MOSFET platform and the AOTL037V60DE2 solve these challenges enabling mid- to high-power application designers of power supplies, solar PV inverters, and DC/DC converters to effectively satisfy today’s and future power efficiency, durability and lower cost demands.”
Typical electrical and thermal characteristics are pictured above.
A gate charge test circuit and waveform are shown below.
You can read more on the AOTL037V60DE2 on the Alpha and Omega Semiconductor website, including the data sheet.
Image: Alpha and Omega Semiconductor
